Electronic spin drift in graphene field effect transistors

We studied the drift of electron spins under an applied DC electric field in single layer graphene spin valves in a field effect transport geometry at room temperature. In the metallic conduction regime ($n \simeq 3.5 \times 10^{16}$ m$^{-2}$), for DC fields of about $\pm$70 kV/m applied between the spin injector and spin detector, the spin valve signals are increased/decreased, depending on the direction of the DC field and the carrier type, by as much as $\pm$50%. Sign reversal of the drift effect is observed when switching from hole to electron conduction. In the vicinity of the Dirac neutrality point the drift effect is strongly suppressed. The experiments are in quantitative agreement with a drift-diffusion model of spin transport.Comment: 4 figure

Controlling the efficiency of spin injection into graphene by carrier drift

Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room temperature non-local spin valve measurements in cobalt/aluminum-oxide/graphene structures with an injection efficiency as high as 25%, where electrical contact is achieved through relatively transparent pinholes in the oxide. This value is further enhanced to 43% by applying a DC current bias on the injector electrodes, that causes carrier drift away from the contact. A reverse bias reduces the AC spin valve signal to zero or negative values. We introduce a model that quantitatively predicts the behavior of the spin accumulation in the graphene under such circumstances, showing a good agreement with our measurements.Comment: 4 pages, 3 color figure

Large yield production of high mobility freely suspended graphene electronic devices on a PMGI based organic polymer

The recent observation of fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron-electron interaction dynamics. However, the technique used currently for the fabrication of such high mobility devices has several drawbacks. The most important is that the contact materials available for electronic devices are limited to only a few metals (Au, Pd, Pt, Cr and Nb) since only those are not attacked by the reactive acid (BHF) etching fabrication step. Here we show a new technique which leads to mechanically stable suspended high mobility graphene devices which is compatible with almost any type of contact material. The graphene devices prepared on a polydimethylglutarimide based organic resist show mobilities as high as 600.000 cm^2/Vs at an electron carrier density n = 5.0 10^9 cm^-2 at 77K. This technique paves the way towards complex suspended graphene based spintronic, superconducting and other types of devices.Comment: 14 pages, 4 figure

Electronic spin transport in graphene field effect transistors

Spin transport experiments in graphene, a single layer of carbon atoms, indicate spin relaxation times that are significantly shorter than the theoretical predictions. We investigate experimentally whether these short spin relaxation times are due to extrinsic factors, such as spin relaxation caused by low impedance contacts, enhanced spin flip processes at the device edges or the presence of an aluminium oxide layer on top of graphene in some samples. Lateral spin valve devices using a field effect transistor geometry allowed for the investigation of the spin relaxation as a function of the charge density, going continuously from metallic hole to electron conduction (charge densities of $n\sim 10^{12}$cm$^{-2}$) via the Dirac charge neutrality point ($n \sim 0$). The results are quantitatively described by a one dimensional spin diffusion model where the spin relaxation via the contacts is taken into account. Spin valve experiments for various injector/detector separations and spin precession experiments reveal that the longitudinal (T$_1$) and the transversal (T$_2$) relaxation times are similar. The anisotropy of the spin relaxation times $\tau_\parallel$ and $\tau_\perp$, when the spins are injected parallel or perpendicular to the graphene plane, indicates that the effective spin orbit fields do not lie exclusively in the two dimensional graphene plane. Furthermore, the proportionality between the spin relaxation time and the momentum relaxation time indicates that the spin relaxation mechanism is of the Elliott-Yafet type. For carrier mobilities of 2-5$\times 10^3$ cm2^/Vs and for graphene flakes of 0.1-2 $\mu$m in width, we found spin relaxation times of the order of 50-200 ps, times which appear not to be determined by the extrinsic factors mentioned above.Comment: 11 pages, 13 figure

Large-Scale Electron Microscopy Maps of Patient Skin and Mucosa Provide Insight into Pathogenesis of Blistering Diseases

Large-scale electron microscopy (“nanotomy”) allows straight forward ultrastructural examination of tissue, cells, organelles, and macromolecules in a single data set. Such data set equals thousands of conventional electron microscopy images and is freely accessible (www.nanotomy.org). The software allows zooming in and out of the image from total overview to nanometer scale resolution in a ‘Google Earth’ approach. We studied the life-threatening human autoimmune blistering disease pemphigus, using nanotomy. The pathomechanism of cell–cell separation (acantholysis) that underlies the blistering is poorly understood. Ultrastructural examination of pemphigus tissue revealed previously unreported findings: (i) the presence of double-membrane structures between cells in all pemphigus types; (ii) the absence of desmosomes around spontaneous blisters in pemphigus foliaceus (PF); (iii) lower level blistering in PF when force induced; and (iv) intercellular widening at non-acantholytic cell layers. Thus, nanotomy delivers open-source electron microscopic maps of patient tissue, which can be analyzed for additional anomalies from any computer by experts from different fields

Anisotropic spin relaxation in graphene

Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the non-local geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field $B$ applied perpendicular to the graphene layer. Fields above 1.5 T force the magnetization direction of the ferromagnetic contacts to align to the field, allowing injection of spins perpendicular to the graphene plane. A comparison of the spin signals at B = 0 and B = 2 T shows a 20 % decrease in spin relaxation time for spins perpendicular to the graphene layer compared to spins parallel to the layer. We analyze the results in terms of the different strengths of the spin orbit effective fields in the in-plane and out-of-plane directions.Comment: 5 pages, 4 figure

IgE autoantibodies in serum and skin of non-bullous and bullous pemphigoid patients

Background Non-bullous pemphigoid (NBP) is a pemphigoid variant which frequently resembles other pruritic skin diseases. In contrast with bullous pemphigoid (BP), blisters are absent. In BP, previous studies showed that IgE autoantibodies may be involved in its pathogenesis. IgE-activated mast cells, basophils and eosinophils may participate in BP by inducing pruritus and possibly blister formation, although the differential role of IgE in NBP compared with BP has not yet been described. Objective To assess IgE in serum and skin of NBP and BP patients. Methods We examined total IgE and pemphigoid-specific IgE in the serum of 68 NBP and 50 BP patients by enzyme-linked immunosorbent assay (ELISA). Sera of 25 pemphigus patients and 25 elderly patients with pruritus were included as controls. Skin biopsies of 14 NBP and 14 BP patients with the highest IgE titres to NC16A were stained for IgE by immunofluorescence techniques. Results Total IgE was elevated in 63% of NBP and 60% of BP patients, and in 20% of pemphigus controls, as well as 60% of elderly controls. IgE ELISAs were more frequently positive in BP than in NBP (NC16A 18% vs. 9%, P = 0.139; BP230 34% vs. 22%, P = 0.149). IgE ELISAs for NC16A and BP230 were positive in 8% and 20% of elderly controls, respectively, while all pemphigus controls were negative. Two of 28 biopsies (7%; one NBP, one BP) showed linear IgE along the basement membrane zone, while in most biopsies (71% NBP; 86% BP) IgE was bound to dermal cells. Conclusion Since IgE was present in the serum and skin of both NBP and BP patients, this supports IgE-dependent mechanisms common to both diseases, such as pruritus. However, it remains to be elucidated whether IgE contributes to blister formation in BP

A review of ransomware families and detection methods

Ransomware has become a significant problem and its impact is getting worse. It has now become a lucrative business as it is being offered as a service. Unlike other security issues, the effect of ransomware is irreversible and difficult to stop. This research has analysed existing ransomware classifications and its detection and prevention methods. Due to the difficulty in categorizing the steps none of the existing methods can stop ransomware. Ransomware families are identified and classified from the year 1989 to 2017 and surprisingly there are not much difference in the pattern. This paper concludes with a brief discussion about the findings and future work of this research

Dirac electrons in graphene-based quantum wires and quantum dots

In this paper we analyse the electronic properties of Dirac electrons in finite-size ribbons and in circular and hexagonal quantum dots made of graphene.Comment: Contribution for J. Phys.: Cond. Mat. special issue on graphene physic